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ALTG-444-VSLASHQ

Limit Alarms (rotary switch adj.) AL-UNIT

AN444

DISSIPATIONPOWERANDSURGECURRENTDURATION

AOD444

N-ChannelEnhancementModeFieldEffectTransistor

AOD444

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=12A@TC=25℃ ?DrainSourceVoltage- :VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lo

AOD444

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=60V,ID=20A,RDS(ON)

AOD444

60VN-ChannelMOSFET

GeneralDescription TheAOD444usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.AOD444L(GreenProduct)isofferedinalead-freepackage. Features VDS(V)=

AOD444

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=12A(VGS=10V) ●RDS(ON)

AOD444

N-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS ?DC/DCConverters ?DC/ACInverters ?MotorDrives

AOD444

60VN-ChannelMOSFET

ProductSummary VDS60V ID(atVGS=10V)12A RDS(ON)(atVGS=10V)

AOD444

60VN-ChannelMOSFET

GeneralDescription TheAOD444combineadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDS(ON).Thosedevicesaresuitableforuse inPWM,loadswitchingandgeneralpurposeapplications. ProductSummary VDS60V ID(atVGS=10V)12A RDS(ON)(atVGS