描述 Description

GENERAL DESCRIPTION
ALD110802/ALD110902 are high precision monolithic quad/dual enhance ment mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD? CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.FEATURES
? Enhancement-mode (normally off)
? Precision Gate Threshold Voltage of +0.20V
? Matched MOSFET to MOSFET characteristics
? Tight lot to lot parametric control
? Low input capacitance
? VGS(th)match (VOS) to 10mV
? High input impedance — 1012 ? typical
? Positive, zero, and negative VGS(th)temperature coefficient
? DC current gain 108
? Low input and output leakage currents

特性 Features

? Enhancement-mode (normally off)
? Precision Gate Threshold Voltage of +0.20V
? Matched MOSFET to MOSFET characteristics
? Tight lot to lot parametric control
? Low input capacitance
? VGS(th)match (VOS) to 10mV
? High input impedance — 1012 ? typical
? Positive, zero, and negative VGS(th)temperature coefficient
? DC current gain 108
? Low input and output leakage currents