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AGB3301

50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCTDESCRIPTION TheAGB3301isoneofaseriesofGaAsMESFETamplifiersdesignedforuseinapplicationsrequiringhighlinearity,lownoiseandlowdistortion.WithahighoutputIP3,lownoisefigureandwidebandoperation,theAGB3301isidealfor50?wirelessinfrastructureapplicatio

AGB3301

50 ohm High IP3 Low Noise Wideband Gain Block; ? 250 - 3000 MHz Frequency Range\n? +45 dBm Output IP3\n? Low Noise Figure: 2.4 dB at 900 MHz\n? 13.5 dB Gain at 900 MHz\n? +24 dBm P1dB\n? SOT-89 Package\n? Single +5V to +9V Supply\n? Low Power: less than 1 Watt\n? Case Temperature: -40 to +100 oC\n? RoHS Compliant Package, 260 oC MSL-2;

Please note: this product is being discontinued and is not recommended for new designs.\n\nThe AGB3301 is one of a series of GaAs MESFETamplifiers designed for use in applicationsrequiring high linearity, low noise and low distortion.With a high output IP3, low noise figure and wideband operation, the AGB3301 is ideal for 50Ω wirelessinfrastructure applications such as Cellular BaseStations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3301 requires asingle +5V to +9V supply, and typically consumes lessthan 1 Watt of power.

AGB3301

The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...;

AGB3301

50ohm High Linearity Low Noise Wideband Gain Block

AGB3301S24Q1

50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCTDESCRIPTION TheAGB3301isoneofaseriesofGaAsMESFETamplifiersdesignedforuseinapplicationsrequiringhighlinearity,lownoiseandlowdistortion.WithahighoutputIP3,lownoisefigureandwidebandoperation,theAGB3301isidealfor50?wirelessinfrastructureapplicatio

AGB3301_12

50ohm High Linearity Low Noise Wideband Gain Block

AGB3301RS24Q1

50ohm High Linearity Low Noise Wideband Gain Block