首頁 >AFGY120T65SPD>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
AFGY120T65SPD | 絲?。?a target="_blank" title="Marking" href="/65spd/marking.html">65SPD;Package:TO-247-3LD;Field Stop Trench IGBT with Soft Fast Recovery Diode 120A, 650V | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
AFGY120T65SPD | Package:TO-247-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT - 650 V 120 A FS3 FOR EV TR | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning; ? Vcesat and Vth Binning\n? allows better current sharing and thermal management in application\n? Automotive Qualified\n? Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A\n? Maximum Junction Temperature: TJ = 175°C\n? Positive Temperature Co-efficient\n? Tight Parameter Distribution\n? High Input Impedance\n? 100% of the Parts are Dynamically Tested\n? Short circuit ruggedness > 6μs @ 25 oC\n? Copacked with Soft, Fast Recovery Extremefast Diode\n? This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant\n; AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application. | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/afgy120t65spda/marking.html">AFGY120T65SPDA;Package:TO-247-3LD;Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Package:TO-247-3;包裝:散裝 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT FS3 120A 650V TO247-3 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號:
AFGY120T65SPD
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 系列:
Automotive, AEC-Q101
- 包裝:
管件
- IGBT 類型:
溝槽型場截止
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.05V @ 15V,120A
- 開關(guān)能量:
6.6mJ(開),3.8mJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
40ns/80ns
- 測試條件:
400V,120A,5 歐姆,15V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT - 650 V 120 A FS3 FOR EV TR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
928 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價 | ||
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
ON |
24+ |
TO-247-3 |
25000 |
ON全系列可訂貨 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
onsemi |
25+ |
TO-247-3 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
onsemi(安森美) |
2025+ |
TO-247-3 |
55740 |
詢價 | |||
ON/安森美 |
2223+ |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險 |
詢價 | |||
ON/安森美 |
23+ |
24000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | |||
ONSEMI |
22 |
SOP12 |
1599000 |
全新、原裝 |
詢價 |
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