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AT-904

StriplineMountingFixedAttenuators(DCto8GHz)

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

BF904

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BF904WR

N-channeldual-gateMOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904

CATVamplifiermodules

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidenticalonlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904L

CATVamplifiermodule

DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingwithasupplyvoltageof24V. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentreliability

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904MI

CATVamplifiermodules

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidenticalonlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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