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APT5020BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5020BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT5020BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5020BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT5020BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5020DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT5020SLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall

ADPOW

Advanced Power Technology

APT5020SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT5020SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc

ADPOW

Advanced Power Technology

AS5020

6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE

GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc

AMSCOams AG

艾邁斯歐司朗艾邁斯歐司朗股份公司

產品屬性

  • 產品編號:

    ADP5020CP-EVALZ

  • 制造商:

    Analog Devices Inc.

  • 類別:

    開發(fā)板,套件,編程器 > 評估板 - DC/DC 與 AC/DC(離線)SMPS

  • 包裝:

  • 主要用途:

    DC/DC,LDO 步降

  • 輸出和類型:

    3,非隔離

  • 電壓 - 輸出:

    1.2V,1.8V,3.3V

  • 電流 - 輸出:

    600mA,250mA,150mA

  • 電壓 - 輸入:

    2.4V ~ 5.5V

  • 穩(wěn)壓器拓撲:

    降壓

  • 頻率 - 開關:

    3MHz

  • 板類型:

    完全填充

  • 所含物品:

  • 使用的 IC/零件:

    ADP5020

  • 描述:

    BOARD EVAL PMU IMAGING ADP5020

供應商型號品牌批號封裝庫存備注價格
AD
23+
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19960
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AD
1824+
NA
16
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ADI/亞德諾
23+
6000
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Analog Devices
23+
900
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ADI/亞德諾
22+
66900
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ADI/亞德諾
2511
原封裝
66900
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ADI
22+
N/A
60000
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ADI
23+
N/A
5000
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ADI
23+
N/A
5000
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ADI/亞德諾
24+
QFN
60000
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更多ADP5020CP-EVALZ供應商 更新時間2025-7-29 15:01:00