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ADM13N10S

N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Applications: ●Li-BatteryManagementSystem ●USBPowerDelivery ●BLDCDrive ●SynchronousRectifica

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

ADM13N10S

MOSFET;

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

CEB13N10

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB13N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB13N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB13N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB13N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP13N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP13N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP13N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

技術(shù)參數(shù)

  • Configuration：

    Single

  • Polarity：

    N

  • ID（25℃）：

    13

  • RDS(on) mΩ(Max)VGS=10V：

    9.5

  • RDS(on) mΩ(Max)VGS=4.5V：

    13.5

  • VGS：

    ±20

  • VGS（th)：

    2.6

  • Package：

    SOP8

  • Qg (nC)：

    24

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
23+
DIP16
3880
正品原裝貨價(jià)格低
 詢價(jià)
ADI/亞德諾
22+
66900
原封裝
 詢價(jià)
ADI/亞德諾
25+
原封裝
8800
公司只做原裝,詳情請(qǐng)咨詢
 詢價(jià)
ADI/亞德諾
2511
原封裝
66900
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
 詢價(jià)
ADI
2450+
SSOP16
6540
只做原廠原裝正品終端客戶免費(fèi)申請(qǐng)樣品
 詢價(jià)
ADI/亞德諾
2447
SOP16
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
ADI/亞德諾
23+
DIP
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
AD
23+
DIP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
AD
23+
DIP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ADI/亞德諾
1612+
SOP20
6652
代理品牌
 詢價(jià)
更多ADM13N10S供應(yīng)商 更新時(shí)間2025-7-28 10:36:00

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