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首頁>ADL8106ACEZ-R7>規(guī)格書詳情

ADL8106ACEZ-R7中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書

ADL8106ACEZ-R7
廠商型號

ADL8106ACEZ-R7

功能描述

GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz

文件大小

1.91738 Mbytes

頁面數(shù)量

26

生產(chǎn)廠商 Analog Devices
企業(yè)簡稱

AD亞德諾

中文名稱

亞德諾半導(dǎo)體技術(shù)有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-6 11:46:00

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ADL8106ACEZ-R7規(guī)格書詳情

GENERAL DESCRIPTION

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrated

circuit (MMIC), wideband low noise amplifier that operates from

18 GHz to 54 GHz. All the typically required external passive

components for operation (ac coupling capacitors and power supply

decoupling capacitors) are integrated, which facilitates a small and

compact printed circuit board (PCB) footprint.

The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB

compression (OP1dB) of 14.5 dBm, and a typical output third-order

intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106

requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106

is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small

outline no lead cavity (LGA_CAV) package.

FEATURES

? Integrated power supply capacitors and bias inductors

? Integrated ac-coupling capacitors

? Gain: 21.5 dB typical at 30 GHz to 44 GHz

? Input return loss: 12.5 dB typical at 30 GHz to 44 GHz

? Output return loss: 19 dB typical at 30 GHz to 44 GHz

? OP1dB: 14.5 dB typical at 30 GHz to 44 GHz

? PSAT: 19 dBm typical at 30 GHz to 44 GHz

? OIP3: 21.5 dBm typical at 30 GHz to 44 GHz

? Noise figure: 3.5 dB typical at 30 GHz to 44 GHz

? 3 V typical supply voltage at 120 mA

? 50 Ω matched input and output

? 24-terminal, 5.00 mm × 5.00 mm, chip array small outline no lead cavity [LGA_CAV]

APPLICATIONS

? Test instrumentation

? Military and space

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