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ADG849

3V/5VCMOS0.5廓SPDT/2:1MuxinSC70

GENERALDESCRIPTION TheADG849isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferultralowon-resistancevaluesoftypically0.5?.ThisdesignmakestheADG849anidealsolutionforapplicationsthatrequire

ADG849YKSZ-REEL

3V/5VCMOS0.5ohmSPDT/2:1MuxinSC70

GENERALDESCRIPTION TheADG849isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferultralowon-resistancevaluesoftypically0.5?.ThisdesignmakestheADG849anidealsolutionforapplicationsthatrequire

AH849

FULLYBUFFEREDANTI-ALIASINGPRE/POSTFILTER

AN-849

UsingOpAmpsasComparators

BC849

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?ForComplementaryWithPNPTypeBC859/860.

BC849

SmallSignalTransistors(NPN)

FEATURES ?NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ?Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ?Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ

BC849

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

BC849

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

BC849

SOT23PNPSILICONPLANARGENERALPURPOSETRANSISTORS

BC849

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Generalpurposeswitchingandamplification.

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