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BC849

NPNEpitaxialSiliconTransistor

Features ?SwitchingandAmplifierApplications ?Suitableforautomaticinsertioninthickandthin-filmcircuits ?LowNoise:BC849,BC850 ?ComplementtoBC856...BC860

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC849

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

DiotecDiotec Semiconductor

德歐泰克

BC849

NPNGeneralPurposeTransistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

BC849

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforswitchingandAFamplifieramplificationsuitableforautomaticinsertioninthickandthin-filmcircuits.

DCCOM

Dc Components

BC849

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications AscomplementarytypesthePNPtransistors BC856...BC860isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技(東莞)有限公司

BC849

EPITAXIALPLANARNPNTRANSISTOR

KECKEC CORPORATION

KEC株式會社

BC849

SOT-23-PowerTransistorandDarlingtons

RECTRON

Rectron Semiconductor

BC849

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

?Powerdissipation250mW ?PlasticcaseSOT-23(TO-236) ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德歐泰克

BC849

NPNGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT225mWatts FEATURES ?Generalpurposeamplifierapplications ?NPNepitaxialsilicon,planardesign ?CollectorcurrentIC=100mA ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BC849

NPNSiliconAFTransistors

?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes: BC856...-BC860...(PNP) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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更多AD849AQ.SQ供應商 更新時間2025-7-28 16:39:00