特性 Features

? Devices QML Qualified in Accordance with MIL-PRF38535

? Detailed Electrical and Screening Requirements are

Contained in SMD# 5962-96703 and Intersil’s QM Plan

? 1.25 Micron Radiation Hardened SOS CMOS

? Total Dose >300K RAD (Si)

? Single Event Upset (SEU) Immunity: <1 x 10-10

Errors/Bit/Day (Typ)

? SEU LET Threshold>100 MEV-cm2/mg

? Dose Rate Upset>1011 RAD (Si)/s, 20ns Pulse

? Dose Rate Survivability>1012 RAD (Si)/s, 20ns Pulse

? Latch-Up Free Under Any Conditions

? Military Temperature Range-55oC to +125oC

? Significant Power Reduction Compared to ALSTTL

Logic

? DC Operating Voltage Range 4.5V to 5.5V

? Input Logic Levels

- VIL = 30 of VCC Max

- VIH = 70 of VCC Min

? Input Current ? 1?A at VOL, VOH

? Fast Propagation Delay15ns (Max), 10ns (Typ)

描述 Description

The Intersil ACS03MS is a Radiation Hardened quad 2-input

NAND gate with open drain outputs. The open drain output

can drive resistive loads from a separate supply voltage.

The ACS03MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of a

radiation hardened, high-speed, CMOS/SOS Logic Family.

The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K

suffix) or a Ceramic Dual-In-Line Package (D suffix).