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APT1004RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RGN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RKN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RKN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    ACR1004A-EVB

  • 制造商：

    Abracon LLC

  • 類別：

    開發(fā)板，套件，編程器 > 射頻評(píng)估和開發(fā)套件，開發(fā)板

  • 包裝：

    盒

  • 類型：

    天線

  • 頻率：

    2.4GHz ~ 2.5GHz，5.15GHz ~ 7.125GHz

  • 配套使用/相關(guān)產(chǎn)品：

    ACR1004A

  • 所含物品：

    板

  • 描述：

    EVAL BOARD ACR1004A ANTENNA

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更多ACR1004A-EVB供應(yīng)商 更新時(shí)間2025-7-29 11:06:00

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