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ACE11560LAYM+H中文資料ACE數(shù)據(jù)手冊PDF規(guī)格書

廠商型號(hào) |
ACE11560LAYM+H |
功能描述 | 60V N-Channel Power MOSFET |
文件大小 |
233.11 Kbytes |
頁面數(shù)量 |
3 頁 |
生產(chǎn)廠商 | ACE |
網(wǎng)址 | |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-8-8 14:01:00 |
人工找貨 | ACE11560LAYM+H價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
ACE11560LAYM+H規(guī)格書詳情
描述 Description
The ACE11560LA uses advanced trench technology to provide excellent RDS(ON), low gate charge. It
can be used in a wide variety of applications.
特性 Features
? VDS = 60V, ID = 50A
? RDS(ON) < 15mΩ @ VGS=10V
? RDS(ON) < 18mΩ @ VGS=4.5V
? High density cell design for lower RDS(ON)
? Fully characterized avalanche voltage and current
? Good stability and uniformity with high EAS
? Excellent package for good heat dissipation
Applications
? Power switching application
? Hard switched and High frequency circuits
? Uninterruptible power supply