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DTA125TSA

Marking：A125TS；Package：SPT/SC-72；Digital transistor (built-in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninverter circuitwithoutconnectingexternalinputresistors. 2)Thebiasresistorsconsistofthin-filmresistorswithcomplete isolationtoallowpositivebiasingoftheinput,andparasitic effectsarealmostcompl

DTA143ESA

Marking：A143ES；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=R2=4.7kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy. 4)Co

DTA143XSA

Marking：A143XS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

DTA144ESA

Marking：A144ES；Package：TO-92S；PNP Digital Transistors (Built-in Resistors)

FEATURES *Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). *Onlytheon/offconditionsneedtobesetforoperation,makingdevicedesigneasier. *Thebiasresistorsconsistofthin-filmresistorswi

DTA144VSA

Marking：A144VS；Package：SPT/SC-72；Digital transistor (built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors. 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallowpositivebiasingoftheinput,andparasiticeffectsarealmostcompletelyelimin

FKCA1002

Marking：A1030；Package：DFN3x3；Dual N-Ch Fast Switching MOSFETs

GeneralDescription TheFKCA1002isthelowRDSONtrenchedN-CH MOSFETswithrobustESDprotection.This productissuitableforLithium-ionbatterypack applications. TheFKCA1002meettheRoHSandGreen Productrequirementwithfullfunctionreliability approved.

FMA10A

Marking：A10；Package：SMT5；General purpose (dual digital transistors)

UMA10N/FMA10A/IMB17A Features 1)TwoDTA113ZchipsinaUMTorSMTpackage. UMG10N Features 1)TwoDTA113ZchipsinaUMTpackage.

HM2301B

Marking：A12SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description TheHM2301BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-2.5A RDS(ON)

IRLML6344TRPBF

Marking：A19T；Package：SOT23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures ?Vos=-30Vlo=424 Rosin

IRLML6402

Marking：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyIRLML6402 GeneralFeatures VDS=-20VID =-2.3A RDS(ON)