employing the Schottky Barrier principle in a metal?to?silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

特性 Features

? Compact Package with J?Bend Leads Ideal for Automated Handling

? Highly Stable Oxide Passivated Junction

? Guardring for Over?Voltage Protection

? Low Forward Voltage Drop

? ESD Ratings:

? Human Body Model = 3B (> 16000 V)

? Machine Model = C (> 400 V)

? NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These are Pb?Free Devices

Mechanical Characteristics

? Case: Molded Epoxy

? Epoxy Meets UL94, VO at 1/8″

? Weight: 95 mg (approximately)

? Maximum Temperature of 260°C / 10 Seconds for Soldering

? Cathode Polarity Band

? Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3”

Suffix to Part Number

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? Marking: BKJL