首頁>935152722510-T3N>規(guī)格書詳情
935152722510-T3N中文資料村田數據手冊PDF規(guī)格書
相關芯片規(guī)格書
更多- 935152722410-F1S
- 935152722410-T3N
- 935152722410-T3S
- 935152722410-T5S
- 935152722456-F1S
- 935152722456-T3N
- 935152722456-T3S
- 935152722456-T5S
- 935152722510-F1S
- 935152493547-F1N
- 935152493547-F1S
- 935152493547-T3N
- 935152493547-T4N
- 935152492510-T5S
- 935152493547-T3N
- 935152493547-T3S
- 935152722410-T3N
- 935152722410-T3S
935152722510-T3N規(guī)格書詳情
? Ultra-Broadband performance up to 67 GHz
? Resonance free
? Phase stability
? Insertion low < 0.4dB Typ. up to 60 GHz
? Ultra-high stability of capacitance value:
o Temperature 70ppm/K (-55 °C to +150 °C)
o Voltage <-0.1/Volt
o Negligible capacitance loss through ageing
? Low profile: 140 μm including bump height
? Break down voltage : 30V
? Low leakage current < 100pA
? High reliability
? High operating temperature (up to 150 °C)
? Compatible with high temperature cycling
during manufacturing operations (exceeding 300 °C)
? Compatible with EIA 01005 footprint and with EIA 0201 outline
? SAC305 40μm bumps after reflow
