首頁 >7N65KL-MTQ>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
7.4A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65LisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
650VN-ChannelEnhancementModeMOSFET Description TheAP7N65F/PissiliconN-channelEnhanced VDMOSFETs,isobtainedbytheself-alignedplanarTechnology whichreducetheconductionloss,improveswitching performanceandenhancetheavalancheenergy.Thetransistor canbeusedinvariouspowerswitchingcircuitforsystem mini | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN |
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