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65R026M2

型號:IMBG65R026M2H;Package:PG-TO263-7;CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R026M2

型號:IMLT65R026M2H;Package:PG-HDSOP-16;SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R026M2

型號:IMT65R026M2H;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R026M2

型號:IMTA65R026M2H;Package:PG-LHSOF-4;SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R026M2

型號:IMW65R026M2H;Package:PG-TO247-3;SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R026M2

型號:IMZA65R026M2H;Package:PG-TO247-4;SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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更多65R026M2供應商 更新時間2025-7-29 11:17:00