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5N1

型號(hào)：744760051A；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

5N10L110

型號(hào)：IAUC60N10S5L110；Package：PG-TDSON-8-33；OptiMOS?-5 Power Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-LogicLevel ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

5N1L094D

型號(hào)：IAUCN10S5L094D；Package：PG-TDSON-8-60；OptiMOSTM 5 Power-Transistor

Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

5N1L280D

型號(hào)：IAUCN10S5L280D；Package：PG-TDSON-8-61；OptiMOSTM 5 Power-Transistor

Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

5N10N016

型號(hào)：IAUMN10S5N016G；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

5N10N017

型號(hào)：IAUMN10S5N017G；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan

5N10014

型號(hào)：IAUT300N10S5N014；Package：PG-HSOF-8-1；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

5N12N017

型號(hào)：IAUTN12S5N017；Package：PG-HSOF-8-1；OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan

5N12N018

型號(hào)：IAUTN12S5N018G；Package：PG-HSOG-8-1；OptiMOS? 5 Power-Transistor

Potentialapplications Generalautomotiveapplications. Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°

5N12N018

型號(hào)：IAUTN12S5N018T；Package：PG-HDSOP-16-1；OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan