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型號(hào)：2N7002NXBK；Package：SOT23；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? Elect

文件：288.98 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BUK6D23-40E；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Side wettable flanks for o

文件：289.18 Kbytes 頁數(shù)：15 Pages

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安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BZX384-A33；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to

文件：302.42 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BZX384-A33；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BZX384-A33-Q；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BZX884S-C3V0；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：BZX884S-C3V0-Q；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號(hào)：MM1Z6V2；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 500mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：776.59 Kbytes 頁數(shù)：2 Pages

JUXING

廣東鉅興電子

型號(hào)：TCK22925G；Package：WCSP6E；2A, 25mΩ Load Switch IC with Slew Rate Control Driver

The TCK2292xG and TCK2297xG are load switch ICs for power management with slew rate control driver featuring wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 25 mΩ typical at 5.0 V, -0.5 A load condition and these feature a slew rate control driver. TCK2292xG has out

文件：564.08 Kbytes 頁數(shù)：15 Pages

TOSHIBA

東芝

型號(hào)：TTC013；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ? High-Voltage Switching ? LCD Backlighting Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)

文件：175.73 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝