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PBSS4041SP

Marking:4041SP;Package:SO8;60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

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PBSS4041SPN

Marking:4041SPN;Package:SO8;60 V NPN/PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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