零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking:4041SP;Package:SO8;60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
Marking:4041SPN;Package:SO8;60 V NPN/PNP low VCEsat (BISS) transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA |
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