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10SMBT8.0CA

Marking：3C8；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

10SMBT8.5CA

Marking：3CV8；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

10SMBT9.0CA

Marking：3C9；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

CPDH3V3-HF

Marking：3CM；Package：SOD-523；SMD ESD Protection Diode

Features -Peakpowerdissipation:400W(8/20μs). -IEC61000-4-4(EFT)40A(5/50ns). -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -ProtectsonedirectionalI/Oline. -Lowcapacitance. -Workingvoltages:3.3V -Lowleakagecurrent. -Lowclampingvoltage.

LMK3C0105V18RERR

Marking：3CV3；Package：TQFN；LMK3C0105 Reference-less 5-LVCMOS-Output Programmable BAW Clock Generator

1Features ?IntegratedBAWresonator,noneedforexternal reference ?Flexiblefrequencygeneration: –100MHzto400MHzdualFractionalOutput Dividers(FODs) –Twochanneldividers:uptothreeuniqueoutput frequenciesfrom2.5MHzto200MHz ?Example:OUTA/B/C/D/E=25MHz ?Example:O

LMK3C0105V33RERR

Marking：3CV1；Package：TQFN；LMK3C0105 Reference-less 5-LVCMOS-Output Programmable BAW Clock Generator

1Features ?IntegratedBAWresonator,noneedforexternal reference ?Flexiblefrequencygeneration: –100MHzto400MHzdualFractionalOutput Dividers(FODs) –Twochanneldividers:uptothreeuniqueoutput frequenciesfrom2.5MHzto200MHz ?Example:OUTA/B/C/D/E=25MHz ?Example:O

PE4105C3C6_R1_00001

Marking：3C6；Package：SOT-363；HI-SURGE ESD PROTECTION

Features ?IEC61000-4-2(ESD):±30kVAir,±30kVContact ?IEC61000-4-4(EFT):40A(5/50ns) ?IEC61000-4-5(Lightning):13A(8/20uS) ?Lowclampingvoltage ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PSMN3R2-25YLC

Marking：3C225L；Package：SOT669；N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

PSMN3R2-30YLC

Marking：3C230L；Package：SOT669；N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

PSMN3R7-25YLC

Marking：3C725L；Package：SOT669；N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low