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包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：TRANSISTOR

Renesas Electronics America Inc

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8.7 m? MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 m? MAX. (VGS = 4.5 V, ID = 30 A) ? Low Ciss: Ciss = 5450 pF

文件：142.32 Kbytes 頁(yè)數(shù)：8 Pages

NEC

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