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2SJ624

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ624isaswitchingdevicewhichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES ?1.8Vdrive

2SJ624

Marking：XH；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ624isaswitchingdevicewhichcanbedrivendirectly bya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswitchofportablemachineandsoon. FEATURES ?1.8V

2SJ624

Pch Single Power Mosfet -20V -4.5A 54Mohm Tmm/Sc-96; ? 1.8 V drive available\n? Low on-state resistance RDS(on)1 = 54 m? MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 71 m? MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)3 = 108 m? MAX. (VGS = –1.8 V, ID = –1.5 A)\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日2SJ624 Data Sheet (D15890EJ1V0DS00)PDF200 KB日本語數(shù)據(jù)手冊(cè) 2002年6月1日功率MOS FET 功率MOS FET使用時(shí)的注意事項(xiàng)PDF1.60 MB其他 2008年2月7日功率MOS FET 應(yīng)用例子PDF721 KB其他 2008年2月7日可靠性手冊(cè)PDF15.93 MB其他 2007年9月26日Addhidden documents 項(xiàng)目info: For device-specific or order-specific documentation, submit a support request.developer_board設(shè)計(jì)和開發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴(kuò)展 ECAD 模塊 模型TitleTypeDate2SJ624 SPICE DataZIP0 KB模型 - SPICE2018年8月6日2SJ624 SPICEZIP0 KB模型 - SPICE2018年7月29日?2 models產(chǎn)品選擇Loading products for parametric search...產(chǎn)品選擇導(dǎo)出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號(hào) (2) 有效 (0) 待停產(chǎn)/NRNDPkg. TypeTMMLogical OperatorCarrier TypeEmbossed TapeLogical Operator購買 / 樣片購買 / 報(bào)價(jià)Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模塊\n;

The 2SJ624 is a Pch Single Power Mosfet -20V -4.5A 54Mohm Tmm/Sc-96.

2SJ624-T1B-A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The2SJ624isaswitchingdevicewhichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES ?1.8Vdrive

2SJ624-T1B-A

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

2SJ624_15

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING