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2SJ607-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ607-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數

  • 型號：

    2SJ607-S

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
NEC
23+
T0-262
35890
詢價
NEC
24+
TO-262
8866
詢價
NEC
22+
TO-262
6000
十年配單,只做原裝
 詢價
NEC
22+
TO-262
25000
只做原裝進口現貨,專注配單
 詢價
NEC
23+
TO-262
950
全新原裝正品現貨,支持訂貨
 詢價
NEC
21+
TO-262
950
原裝現貨假一賠十
 詢價
NEC
24+
TO-262
80000
只做自己庫存 全新原裝進口正品假一賠百 可開13%增
 詢價
NEC
23+
TO-251252
27000
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
NEC
24+
8858
公司原廠原裝現貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
2003+
TO263-3
659
原裝現貨海量庫存歡迎咨詢
 詢價
更多2SJ607-S供應商 更新時間2025-7-27 17:30:00

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