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2SJ602

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

2SJ602

MOS Field Effect Transistor

Features Lowon-resistance RDS(on)1=73m?MAX.(VGS=-10V,ID=-10A) RDS(on)2=107m?MAX.(VGS=-4.0V,ID=-10A) LowCiss:Ciss=1300pFTYP. Built-ingateprotectiondiode

2SJ602

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

2SJ602-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

2SJ602-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

2SJ602-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

2SJ602-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=?10V,ID=?10A) RDS(on)2=107mΩMAX.(VGS=?4.0V,ID=?10A) ?

2SJ602-Z

Pch Single Power Mosfet -60V -20A 73Mohm Mp-25Z/To-220Smd; ? Super low on-state resistance: RDS(on)1 = 73 m? MAX. (VGS = ?10 V, ID = ?10 A) RDS(on)2 = 107 m? MAX. (VGS = ?4.0 V, ID = ?10 A)\n? Low input capacitance: Ciss = 1300 pF TYP. (VDS = ?10 V, VGS = 0 V)\n? Built-in gate protection diode\n文檔文檔標題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應用文檔2021年4月16日2SJ602 Data SheetPDF211 KB數(shù)據(jù)手冊2002年7月1日功率MOS FET 功率MOS FET使用時的注意事項PDF1.60 MB其他2008年2月7日功率MOS FET 應用例子PDF721 KB其他2008年2月7日可靠性手冊PDF15.93 MB其他2007年9月26日Addhidden documents 項目info: For device-specific or order-specific documentation, submit a support request.developer_board設計和開發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴展 ECAD 模塊 模型TitleTypeDate2SJ602 SPICE DataZIP0 KB模型 - SPICE2018年8月6日?1 models產品選擇Loading products for parametric search...產品選擇導出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號 \n 有效 (2) 待停產/NRNDPkg. TypeMP-25ZLogical OperatorCarrier TypeBagEmbossed TapeLogical Operator購買 / 樣片購買 / 報價Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模塊\n;

The 2SJ602-Z is a Pch Single Power Mosfet -60V -20A 73Mohm Mp-25Z/To-220Smd.

2SJ602-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=73m?MAX.(VGS=?10V,ID=?10A) RDS(on)2=107m?MAX.(VGS=?4.0V,ID=?10A) ?Lowinputcapacitance: Ciss=

2SJ602-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-20A ●RDS(ON)