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2SJ599-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=75m?MAX.(VGS=–10V,ID=–10A) RDS(on)2=111m?MAX.(VGS=–4.0V,ID=–10A) ?Lowinputcapacitance: Ciss=13

2SJ599-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=75mΩMAX.(VGS=–10V,ID=–10A) RDS(on)2=111mΩMAX.(VGS=–4.0V,ID=–10A) ?Lowi

2SJ599-Z

Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252; ? Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n? Low input capacitance: Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)\n? Built-in gate protection diode\n? TO-251/TO-252 package\n文檔文檔標(biāo)題類(lèi)型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語(yǔ)應(yīng)用文檔 2021年4月16日2SJ599 Data SheetPDF237 KB數(shù)據(jù)手冊(cè) 2006年8月1日功率MOS FET 功率MOS FET使用時(shí)的注意事項(xiàng)PDF1.60 MB其他 2008年2月7日功率MOS FET 應(yīng)用例子PDF721 KB其他 2008年2月7日可靠性手冊(cè)PDF15.93 MB其他 2007年9月26日Addhidden documents 項(xiàng)目info: For device-specific or order-specific documentation, submit a support request.developer_board設(shè)計(jì)和開(kāi)發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴(kuò)展 ECAD 模塊 模型TitleTypeDate2SJ599 SPICE DataZIP0 KB模型 - SPICE2018年8月6日?1 models產(chǎn)品選擇Loading products for parametric search...產(chǎn)品選擇導(dǎo)出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號(hào) (4) 有效 (2) 待停產(chǎn)/NRNDPkg. TypeMP-3ZLogical OperatorCarrier TypeBagEmbossed TapeLogical Operator購(gòu)買(mǎi) / 樣片購(gòu)買(mǎi) / 報(bào)價(jià)Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模塊\n;

The 2SJ599-Z is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252.

2SJ599-Z

P-Channel MOSFET

2SJ599-Z_15

P-Channel MOSFET

2SJ599

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=75mΩMAX.(VGS=–10V,ID=–10A) RDS(on)2=111mΩMAX.(VGS=–4.0V,ID=–10A) ?Lowi

2SJ599

MOSFieldEffectTransistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=75m?MAX.(VGS=-10V,ID=-10A) RDS(on)2=110m?MAX.(VGS=-4.0V,ID=-10A) LowCiss:Ciss=1300pFTYP. Built-ingateprotectiondiode

2SJ599

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=75m?MAX.(VGS=–10V,ID=–10A) RDS(on)2=111m?MAX.(VGS=–4.0V,ID=–10A) ?Lowinputcapacitance: Ciss=13