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2SJ598

SWITCHING P-CHANNEL POWER MOS FET

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=130m?MAX.(VGS=–10V,ID=–6A) RDS(on)2=190m?MAX.(VGS=–4.0V,ID=–6A) ?Low

2SJ598

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) ?LowCi

2SJ598

Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251; ? Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n? Low Ciss: Ciss = 720 pF TYP.\n? Built-in gate protection diode\n? TO-251/TO-252 package\n文檔文檔標題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔2021年4月16日2SJ598 Data SheetPDF237 KB數(shù)據(jù)手冊2006年8月1日功率MOS FET 功率MOS FET使用時的注意事項PDF1.60 MB其他2008年2月7日功率MOS FET 應(yīng)用例子PDF721 KB其他2008年2月7日可靠性手冊PDF15.93 MB其他2007年9月26日Addhidden documents 項目info: For device-specific or order-specific documentation, submit a support request.developer_board設(shè)計和開發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴展 ECAD 模塊 模型TitleTypeDate2SJ598 SPICE DataZIP0 KB模型 - SPICE2018年8月6日2SJ598 SPICEZIP0 KB模型 - SPICE2018年7月29日?2 models產(chǎn)品選擇Loading products for parametric search...產(chǎn)品選擇導(dǎo)出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號 \n 有效 (3) 待停產(chǎn)/NRNDPkg. TypeMP-3Logical OperatorCarrier TypeBagTubeLogical Operator購買 / 樣片購買 / 報價Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模塊\n;

The 2SJ598 is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251.

2SJ598

MOS Field Effect Transistor

2SJ598

P-Channel 4 0 V (D-S) MOSFET

2SJ598-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=130mΩMAX.(VGS=–10V,ID=–6A) RDS(on)2=190mΩMAX.(VGS=–4.0V,ID=–6A) ?LowCi

2SJ598-Z

Isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=130mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

2SJ598-Z

Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Z/To-252; ? Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n? Low Ciss: Ciss = 720 pF TYP.\n? Built-in gate protection diode\n? TO-251/TO-252 package\n文檔文檔標題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日2SJ598 Data SheetPDF237 KB數(shù)據(jù)手冊 2006年8月1日功率MOS FET 功率MOS FET使用時的注意事項PDF1.60 MB其他 2008年2月7日功率MOS FET 應(yīng)用例子PDF721 KB其他 2008年2月7日可靠性手冊PDF15.93 MB其他 2007年9月26日Addhidden documents 項目info: For device-specific or order-specific documentation, submit a support request.developer_board設(shè)計和開發(fā)模型ECAD 模塊Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.擴展 ECAD 模塊 模型TitleTypeDate2SJ598 SPICE DataZIP0 KB模型 - SPICE2018年8月6日?1 models產(chǎn)品選擇Loading products for parametric search...產(chǎn)品選擇導(dǎo)出settings切換fullscreen全屏settings_backup_restore重置help小貼士器件號 (3) 有效 (2) 待停產(chǎn)/NRNDPkg. TypeMP-3ZLogical OperatorCarrier TypeBagEmbossed TapeLogical Operator購買 / 樣片購買 / 報價Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模塊\n;

The 2SJ598-Z is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Z/To-252.

2SJ598-Z

SWITCHING P-CHANNEL POWER MOS FET

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ598isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=130m?MAX.(VGS=–10V,ID=–6A) RDS(on)2=190m?MAX.(VGS=–4.0V,ID=–6A) ?Low

2SJ598_15

SWITCHING P-CHANNEL POWER MOS FET