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2SJ557A

Marking：XS；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ557Aisaswitchingdevicewhichcanbedrivendirectly bya4Vpowersource. The2SJ557Afeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswit

2SJ557A

Power MOSFETs for Automotive; ? 4 V drive available\n? Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = ?10 V, ID = ?1.0 A) RDS(on)2 = 134 mΩ MAX. (VGS = ?4.5 V, ID = ?1.0 A) RDS(on)3 = 166 mΩ MAX. (VGS = ?4.0 V, ID = ?1.0 A)\n? Built-in gate protection diode\n;

Support is limited to customers who have already adopted these products.\n\nThe 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

2SJ557A_15

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

2SJ557

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ557isaswitchingdevicewhichcanbedrivendirectly bya4Vpowersource. The2SJ557featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswitch

2SJ557

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

DESCRIPTION The2SJ557isaswitchingdevicewhichcanbedrivendirectlybya4Vpowersource. The2SJ557featuresalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES ?Canbedriven