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2N7002W

SmallSignalMOSFET60V,340mA,Single,N??hannel,SC??0

Features ?ESDProtected ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowON-Resistance ?LowInputCapacitance ?LowGateThresholdVoltage ?FastSwitchingSpeed ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?Low-OnRe

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5? *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

WEITRON

Weitron Technology

2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@75mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

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