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2N7002K-AU_LD_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LD_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LU_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LU_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LX_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LX_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LY_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_LY_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_R0_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K-AU_R0_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

技術(shù)參數(shù)

  • Automotive Compliant PPAP：

    On Request*

  • Polarity：

    N

  • ESD Diodes：

    Yes

  • VDS：

    60 V

  • VGS：

    20 ±V

  • IDS @ TA = +25°C：

    0.3 A

  • PD @ TA = +25°C：

    0.35 W

  • RDS(ON) Max @ VGS (10V)：

    2000 mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    3000 mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    2.5 V

  • QG Typ @ VGS = 4.5V (nC)：

    N/A nC

  • QG Typ @ VGS = 10V (nC)：

    N/A nC

  • Packages：

    SOT23

供應(yīng)商型號品牌批號封裝庫存備注價格
PANJIT/強(qiáng)茂
22+
SOT23
98800
歡迎來電咨詢 只做原裝
 詢價
FAIRCHILD/仙童
25+
SOT-23
38963
FAIRCHILD/仙童全新特價2N7002K即刻詢購立享優(yōu)惠#長期有貨
 詢價
Diodes
24+
SOT23
21000
只做原正品!假一賠十公司現(xiàn)貨
 詢價
AP
24+
SOT23-3
9700
絕對原裝正品現(xiàn)貨假一罰十
 詢價
CJ/長電
23+
SOT-23
32078
10年以上分銷商,原裝進(jìn)口件,服務(wù)型企業(yè)
 詢價
長電/長晶
23+
SOT-23
60000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CJ/長電
21+
10560
十年專營,原裝現(xiàn)貨,假一賠十
 詢價
恩XP
20+
SOT-23
2000
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
H-DIODE海德
25+
-
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
群鑫
22+
SOT23
30000
原裝正品 一級代理
 詢價
更多2N7002K供應(yīng)商 更新時間2025-7-27 9:02:00

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