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2N7002KBV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002KC

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002KC

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description Itutilizesthelatest

2N7002K-CAR

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowonresistanceRDS(ON)?Lowgatethresholdvoltage?Lowinputcapacitance?ESDprotectedupto2KV?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

2N7002KC-HF

MOSFET

Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage.

2N7002KDU

NChannelMOSFETESDProtected2000V

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity.

2N7002KDW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

2N7002KDW

DualN-ChannelMOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

2N7002KDW

DualN-ChannelSmallSignalMOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

2N7002KDW

DualN-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)