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絲?。?a target="_blank" title="Marking" href="/z3/marking.html">Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?E

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絲印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDprote

2N7002BKT

60 V, 290 mA N-channel Trench MOSFET

General description\nN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits\n? Logic-level compatible\n? Very fast switching\n? Trench MOSFETtechnology\n? ESD protection up t;

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2N7002BKT

60 V, 290 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n;

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DIODES/美臺(tái)
SOT363

DIODES/美臺(tái)