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2N7002KDW

Dual N-Channel MOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

WEITRON

Weitron Technology

2N7002KDW

Dual N-Channel Small Signal MOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002KDW

絲印:72K;Package:SOT-363;Dual N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚州揚杰電子揚州揚杰電子科技股份有限公司

2N7002KDW

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K;Package:SOT-363;Plastic-Encapsulate MOSFET

Features ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected ?LoadSwitchforPortableDevices. ?DC/DCConverter.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002KDW

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON),VGS@10V,IDS@500mA=2? RDS(ON),VGS@4.5V,IDS@200mA=3? FEATURES ?AdvancedTrenchProcessTechnology ?UltraLowOnResistance:2? ?FastSwitchingSpeed:20ns ?LowInputandOutputLeakageCurrent ?2KVESDProtection ?SpeciallyDesignedforHighSpeedCircuit,BatteryOperate

HY

HY ELECTRONIC CORP.

2N7002KDW

N-Channel Enhancement Mode Field Effect Transistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KDW_V01

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KDWA

N-Channel Enhancement Mode Field Effect Transistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KDW-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KDW-AU

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

技術(shù)參數(shù)

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    60

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    2.5

  • ID Max (A):

    0.115

  • PD Max (W):

    0.2

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ):

    7500

  • Qg Typ @ VGS = 10 V (nC):

    1

  • Ciss Typ (pF):

    20

  • Package Type:

    SOT-23-3

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
15+
SOT23
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2015+
50
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50
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ON
21+
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恩XP
24+/25+
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ON-SEMI
22+
N/A
9000
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恩XP
1118
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340
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恩XP
16+
SOT23
12350
進口原裝現(xiàn)貨/價格優(yōu)勢!
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更多2N7002供應(yīng)商 更新時間2021-9-16 14:01:00