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2N7002K

N Channel Enhancement Mode MOSFET

FEATURE ●60V/0.50A,RDS(ON)=2?@VGS=10V ●60V/0.20A,RDS(ON)=4?@VGS=4.5V ●SuperhighdensitycelldesignforextremelylowRDS(ON) ●Exceptionalon-resistanceandMaximumDCcurrentcapability ●ESDcapability:2000V ●SOT-23packagedesign

STANSON

Stanson Technology

2N7002K

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON),VGS@10V,IDS@500mA=2? RDS(ON),VGS@4.5V,IDS@200mA=3? FEATURES ?AdvancedTrenchProcessTechnology ?UltraLowOnResistance:2? ?FastSwitchingSpeed:20ns ?LowInputandOutputLeakageCurrent ?2KVESDProtection ?SpeciallyDesignedforHighSpeedCircuit,BatteryOpe

HY

HY ELECTRONIC CORP.

2N7002K

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features ?60V/0.2A, RDS(ON)=2500m?(Typ.)@VGS=10V RDS(ON)=2500m?(Typ.)@VGS=5V ?ESDprotectedupto2KV ?LowOn-Resistance ?SuperHighDenseCellDesign ?ReliableandRugged ?LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications ?PowerManagementinDesktopC

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司

2N7002K_R1_00501

絲印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K_V01

N-Channel Enhancement MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2N7002K_V01

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K2

Advanced trench MOSFETprocess technology

FeaturesandBenefits: ?AdvancedtrenchMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?HighPowerandcurrenthandingcapability ?FullyAvalancheRated ?ESDProtectionHBM≥2KV Descr

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

2N7002K36

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications.

RECTRON

Rectron Semiconductor

2N7002K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002K-7DITR-ND

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed

DIODESDiodes Incorporated

美臺半導(dǎo)體

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    0.115

  • PD Max (W)：

    0.2

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    7500

  • Qg Typ @ VGS = 10 V (nC)：

    1

  • Ciss Typ (pF)：

    20

  • Package Type：

    SOT-23-3

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
15+
SOT23
30000
全新原裝
 詢價
2015+
50
公司現(xiàn)貨庫存
 詢價
2015+
50
公司現(xiàn)貨庫存
 詢價
ON
17+18+
SOT23
488459
原廠原裝,本地現(xiàn)貨庫存,假一罰十!
 詢價
長電
11+
SOT23
50000
深圳現(xiàn)貨
 詢價
ON
21+
SOT23
30000
只做原裝 有單來談
 詢價
恩XP
24+/25+
SOT236
99000
100%原裝正品真實(shí)庫存,支持實(shí)單
 詢價
ON-SEMI
22+
N/A
9000
原裝正品 香港現(xiàn)貨
 詢價
恩XP
1118
SOT236
340
現(xiàn)貨庫存,有單來談
 詢價
恩XP
16+
SOT23
12350
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
更多2N7002供應(yīng)商 更新時間2021-9-16 14:01:00

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