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2N7002-CAR

Marking：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect

TransistorFeatures ?HighdensitycelldesignforlowRDS(ON)?Voltagecontrolledsmallsignalswitching?Highsaturationcurrentcapability?Highspeedswitching?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002D3

N-Channel Enhancement MOSFET

Features ?VDS=60V,ID=0.32A ?RDS(ON)=1.6Ω@VGS=10V(Typ.) ?RDS(ON)=2.0Ω@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002DS6

Marking：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Halogen-free

RECTRON

Rectron Semiconductor

2N7002DW

Marking：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?Lo

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002DW

Dual N-Channel MOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

WEITRON

Weitron Technology

2N7002DW

Plastic-Encapsulated Transistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

東電電子東京電子有限公司

2N7002DW

Marking：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002DW

Marking：2N；Package：SOT-363；N-Channel Enhancement Mode Field Effect Transistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002DW

OptiMOS??Small-Signal-Transistor

Features ?DualN-channel ?Enhancementmode ?Logiclevel ?Avalancherated ?Fastswitching ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

2N7002DW

Small Signal MOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    0.115

  • PD Max (W)：

    0.2

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    7500

  • Qg Typ @ VGS = 10 V (nC)：

    1

  • Ciss Typ (pF)：

    20

  • Package Type：

    SOT-23-3

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
15+
SOT23
30000
全新原裝
 詢價
2015+
50
公司現(xiàn)貨庫存
 詢價
2015+
50
公司現(xiàn)貨庫存
 詢價
ON
17+18+
SOT23
488459
原廠原裝,本地現(xiàn)貨庫存,假一罰十!
 詢價
長電
11+
SOT23
50000
深圳現(xiàn)貨
 詢價
ON
21+
SOT23
30000
只做原裝 有單來談
 詢價
恩XP
24+/25+
SOT236
99000
100%原裝正品真實庫存,支持實單
 詢價
ON-SEMI
22+
N/A
9000
原裝正品 香港現(xiàn)貨
 詢價
恩XP
1118
SOT236
340
現(xiàn)貨庫存,有單來談
 詢價
恩XP
16+
SOT23
12350
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
更多2N7002供應(yīng)商 更新時間2021-9-16 14:01:00

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