描述 Description

This specification covers the performance requirements for NPN silicon, power, 2N6676, 2N6678, 2N6691 and 2N6693 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/538. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-3, TO-61 , TO-254AA?and TO-257AA for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/538.

簡(jiǎn)介

2N6676屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個(gè)。由制造生產(chǎn)的2N6676晶體管 - 雙極性晶體管（BJT）- 單個(gè)分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號(hào)放大功能。作為大批量生產(chǎn)的第一批半導(dǎo)體器件之一，對(duì)于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢(shì)，但對(duì)于需要以極小的噪聲和失真構(gòu)建模擬信號(hào)的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。