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2N60K-MT

2A, 600V N-CHANNEL POWER MOSFET; ? RDS(ON) < 5.0Ω@VGS = 10V\n? Fast switching capability\n? Avalanche energy specified\n? Improved dv/dt capability, high ruggedness;

The UTC 2N60K-MT is a high voltage power MOSFET and isdesigned to have better characteristics, such as fast switching time,low gate charge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used athigh speed switching applications in power supplies, PWM motorcontrols, high efficient DC to DC converters and bridge circuits.

2N60K-MT

N-CHANNEL POWER MOSFET

2N60K-TA

N-CHANNELJFETCAPACITORMICROPHONEAPPLICATIONS

2N60L

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

2N60L

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

2N60LG-TMA-T

N-CHANNELPOWERMOSFET

2N60LG-TMA-T

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

2N60LG-TMS-T

N-CHANNELPOWERMOSFET

2N60LG-TND-R

N-CHANNELPOWERMOSFET

2N60LG-x-TMA-T

2Amps,600/650VoltsN-CHANNELPOWERMOSFET