特性 Features

? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
? 2300 V functional offset voltage capable for selected applications
? Galvanically isolated coreless transformer gate driver
? Up to 6.5 A typical peak output current
? 39 ns propagation delay
? 35 V absolute maximum output supply voltage
? High common-mode transient immunity CMTI > 200 kV/μs
? Active shutdown and short circuit clamping
? 3.3 V and 5 V input supply voltage
? Enable pin
? 14.7 V/ 16 V undervoltage lockout (UVLO) protection with hysteresis

優(yōu)勢:
? 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
? Tight part-to-part propogation delay skew of 8 ns max
? Tight channel-to-channel propogation delay skew of 5ns max
? Dual-channel configuation reduces footprint
? Dead time control
? UL?1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
? IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)