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2ED2103S06F

650 V half bridge gate driver with integrated bootstrap diode

Features ?UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology ?NegativeVStransientimmunityof-100V ?Floatingchanneldesignedforbootstrapoperation ?Operatingvoltages(VSnode)upto+650V ?Maximumbootstrapvoltage(VBnode)of+675V ?Integratedultra-fast,low

2ED2103S06F

650 V half bridge gate driver with integrated bootstrap diode

2ED2103S06F

650 V half-bridge gate driver with integrated bootstrap diode; \n優(yōu)勢:\n? Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design\n? 50% lower level-shift losses\n? Excellent ruggedness and noise immunity against negative transient voltages on VS pin\n;

2ED2103S06FXUMA1

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：LEVEL SHIFT SOI