DESCRIPTION:

Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit.

FEATURES:

? Single 5.0 V supply

? Excellent Single Event Effect

· - SEL

TH: > 60 MeV/mg/cm2

· - SEU

TH: = 37 MeV/mg/cm2

- SEU saturated cross section: 2E-6 cm2/bit

? Organization:

- Memory cell array: (4M + 128k) bit x 8bit

- Data register: (512 + 16) bit x 8bit

? Automatic program and erase

- Page program: (512 + 16) Byte

- Block erase: (8K + 256) Byte

- Status register

? 528-Byte page read operation

- Random access: 10 μ s (max)

- Serial page access: 50 ns (min)

? Fast write cycle time

- Program time: 250 μ s (typ)

- Block erase time: 2 ms (typ)

? Command/address/data multiplexed I/O port

? Hardware data protection

- Program/erase lockout during power transitions

? Reliable CMOS floating-gate technology

- Endurance: 1,000,000 program/erase cycles

- Data retention: 10 years

? Command register operation

? 44 pin flat package