描述 Description

■ High performance Read-While-Write/Erase
? — 85 ns initial access
? — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode
? — 25 ns asynchronous-page mode
? — 4-, 8-, 16-, and continuous-word burst mode
? — Burst suspend
? — Programmable WAIT configuration
? — Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)
? — 1.8 V low-power buffered programming at 7 μs/byte (Typ)
■ Architecture
? — Asymmetrically-blocked architecture
? — Multiple partitions: 8-Mbit: 128- Mbit devices; 16-Mbit: 256-Mbit devices
? — Four 16-Kword parameter blocks: top or bottom configurations
? — 64-Kword main blocks
? — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
? — Status register for partition and device status
■ Density and Packaging
? — 128- and 256-Mbit density in VF BGA packages
? — 128/0 and 256/0 Density in SCSP
? — 16-bit wide data bus
■ Power
? — VCC (core) = 1.7 V - 2.0 V
? — VCCQ (I/O) = 2.2 V - 3.3 V
? — Standby current: 30 μA (Typ) for 256-Mbit
? — 4-Word synchronous read current: 16 mA (Typ) at 52 MHz
? — Automatic Power Savings mode
■ Security
? — OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits
? — Absolute write protection: VPP = GND
? — Power-transition erase/program lockout
? — Individual zero-latency block locking
? — Individual block lock-down
■ Software
? — 20 μs (Typ) program suspend
? — 20 μs (Typ) erase suspend
? — Numonyx? Flash Data Integrator (Numonyx? FDI) optimized
■ Quality and Reliability
? — Expanded temperature: –25° C to +85° C
? — Minimum 100,000 erase cycles per block
? — Intel ETOX* VIII process technology (0.13 μm)