25AA1024-I/P屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的25AA1024-I/P存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 25AA1024/25LC1024 (25XX1024*) is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.

Features:

? 20 MHz max. Clock Speed

? Byte and Page-level Write Operations:

- 256 byte page

- 6 ms max. write cycle time

- No page or sector erase required

? Low-Power CMOS Technology:

- Max. Write current: 5 mA at 5.5V, 20 MHz

- Read current: 7 mA at 5.5V, 20 MHz

- Standby current: 1μA at 2.5V

(Deep power-down)

? Electronic Signature for Device ID

? Self-Timed Erase and Write Cycles:

- Page Erase (6 ms max.)

- Sector Erase (10 ms max.)

- Chip Erase (10 ms max.)

? Sector Write Protection (32K byte/sector):

- Protect none, 1/4, 1/2 or all of array

? Built-In Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

? High Reliability:

- Endurance: 1M erase/write cycles

? Temperature Ranges Supported:

? Pb-free packages available

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C