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24LC08B-ESLASHSN

8K IC SERIAL EEPROM

Description: TheMicrochipTechnologyInc.24CXX,24LCXX,24AAXXand24FCXX(24XX*)devicesareafamilyof128-bitthrough512KbitElectricallyErasedPROMs.Thedevicesareorganizedinblocksofx8-bitmemorywith2-wireserialinterfaces.Low-voltagedesignpermitsoperationdownto1.7V(fo

24LC08B-ESLASHSNG

8K IC SERIAL EEPROM

Description: TheMicrochipTechnologyInc.24CXX,24LCXX,24AAXXand24FCXX(24XX*)devicesareafamilyof128-bitthrough512KbitElectricallyErasedPROMs.Thedevicesareorganizedinblocksofx8-bitmemorywith2-wireserialinterfaces.Low-voltagedesignpermitsoperationdownto1.7V(fo

24LC08B-ESLASHST

8K IC SERIAL EEPROM

Description: TheMicrochipTechnologyInc.24CXX,24LCXX,24AAXXand24FCXX(24XX*)devicesareafamilyof128-bitthrough512KbitElectricallyErasedPROMs.Thedevicesareorganizedinblocksofx8-bitmemorywith2-wireserialinterfaces.Low-voltagedesignpermitsoperationdownto1.7V(fo

24LC08B-ESLASHSTG

8K IC SERIAL EEPROM

Description: TheMicrochipTechnologyInc.24CXX,24LCXX,24AAXXand24FCXX(24XX*)devicesareafamilyof128-bitthrough512KbitElectricallyErasedPROMs.Thedevicesareorganizedinblocksofx8-bitmemorywith2-wireserialinterfaces.Low-voltagedesignpermitsoperationdownto1.7V(fo

24LC08BH

8K I2C??Serial EEPROM with Half-Array Write-Protect

Description: TheMicrochipTechnologyInc.24AA08H/24LC08BH(24XX08H*)isan8KbitElectricallyErasablePROM.Thedeviceisorganizedasfourblocksof256x8-bitmemorywitha2-wireserialinterface.Low-voltagedesignpermitsoperationdownto1.7V,withstandbyandactivecurrentsofonl

24LC08BH

8Kb I2C compatible 2-wire Serial EEPROM with Half-Array Write Protection; Single Supply with Operation Down to 2.5V\nLow-Power CMOS Technology\n2-Wire Serial Interface, I2C? Compatible\nSchmitt Trigger Inputs for Noise Suppression\nOutput Slope Control to eliminate Ground Bounce\n100 kHz and 400 kHz Clock Compatibility\nPage Write Time 3 ms, typical\nSelf-Timed Erase/Write Cycle\nHardware Write-Protect for Half-Array (200h-3FFh)\nMore than 1 Million Erase/Write cycles;

The Microchip Technology Inc. 24LC08BH is a 8Kb I2C? compatible Serial EEPROM with half array write protection. The device is organized as four blocks of 256 x 8-bitmemory with a 2-wire serial interface. Low-voltage design permits operation down to 2.5V, with standby and active currents of only 1 μA and 1 mA,respectively. The 24LC08BH also has a page write capability for up to 16 bytes of data. The 24LC08BH is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.

24LC08BH-E/MNY

8K I2C??Serial EEPROM with Half-Array Write-Protect

Description: TheMicrochipTechnologyInc.24AA08H/24LC08BH(24XX08H*)isan8KbitElectricallyErasablePROM.Thedeviceisorganizedasfourblocksof256x8-bitmemorywitha2-wireserialinterface.Low-voltagedesignpermitsoperationdownto1.7V,withstandbyandactivecurrentsofonl

24LC08BH-E/MS

8K I2C??Serial EEPROM with Half-Array Write-Protect

Description: TheMicrochipTechnologyInc.24AA08H/24LC08BH(24XX08H*)isan8KbitElectricallyErasablePROM.Thedeviceisorganizedasfourblocksof256x8-bitmemorywitha2-wireserialinterface.Low-voltagedesignpermitsoperationdownto1.7V,withstandbyandactivecurrentsofonl

24LC08BH-E/OT

8K I2C??Serial EEPROM with Half-Array Write-Protect

Description: TheMicrochipTechnologyInc.24AA08H/24LC08BH(24XX08H*)isan8KbitElectricallyErasablePROM.Thedeviceisorganizedasfourblocksof256x8-bitmemorywitha2-wireserialinterface.Low-voltagedesignpermitsoperationdownto1.7V,withstandbyandactivecurrentsofonl

24LC08BH-E/P

8K I2C??Serial EEPROM with Half-Array Write-Protect

Description: TheMicrochipTechnologyInc.24AA08H/24LC08BH(24XX08H*)isan8KbitElectricallyErasablePROM.Thedeviceisorganizedasfourblocksof256x8-bitmemorywitha2-wireserialinterface.Low-voltagedesignpermitsoperationdownto1.7V,withstandbyandactivecurrentsofonl