24LC01BT-I屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的24LC01BT-I存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24CXX, 24LCXX, 24AAXX and 24FCXX (24XX*) devices are a family of 128-bit through 512 Kbit Electrically Erased PROMs. The devices are organized in blocks of x8-bit memory with 2-wire serial interfaces. Low-voltage design permits operation down to 1.7V (for 24AAXX devices), with standby and active currents of only 1 μA and 1 mA, respectively. Devices 1 Kbit and larger have page write capability. Parts having functional address lines allow connection of up to 8 devices on the same bus. The 24XX family is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP and MSOP pack ages. Most 128-bit through 16 Kbit devices are also available in the 5-lead SOT-23 package. DFN packages (2x3mm or 5x6mm) are also available. All packages are Pb-free (Matte Tin) finish.

Features:

? 128-bit through 512 Kbit devices

? Single supply with operation down to 1.7V for 24AAXX devices

? Low-power CMOS technology:

- 1 mA active current, typical

-1μA standby current, typical (I-temp)

? 2-wire serial interface bus, I2C? compatible

? Schmitt Trigger inputs for noise suppression

? Output slope control to eliminate ground bounce

? 100 kHz (1.7V) and 400 kHz (≥ 2.5V) compatibility

? 1 MHz for 24FCXX products

? Self-timed write cycle (including auto-erase)

? Page write buffer

? Hardware write-protect available on most devices

? Factory programming (QTP) available

? ESD protection > 4,000V

? 1 million erase/write cycles

? Data retention > 200 years

? 8-lead PDIP, SOIC, TSSOP and MSOP packages

? 5-lead SOT-23 package (most 1-16 Kbit devices)

? 8-lead 2x3mm and 5x6mm DFN packages available

? Pb-free and RoHS compliant

? Available for extended temperature ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C