24LC014HT-I/MNY屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產的24LC014HT-I/MNY存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24AA014H/24LC014H is a 1 Kbit Serial Electrically Erasable PROM with operation down to 1.7V. The device is organized as a single block of 128 x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with maximum standby and active currents of only 1 μA and 400 μA, respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to eight 24AA014H/ 24LC014H devices on the same bus for up to 8 Kbits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and MSOP packages.

Features:

? Single-Supply with Operation down to 1.7V

? Low-Power CMOS Technology:

- 400 μA active current, maximum

- 1 μA standby current, maximum (I-temp)

? Organized as a Single Block of 128 Bytes(128 x 8)

? 2-Wire Serial Interface Bus, I2C? Compatible

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Compatibility

? 1 MHz Compatibility (LC)

? Page Write Buffer for up to 16 Bytes

? Self-Timed Write Cycle (including Auto-Erase)

? Hardware Write Protection for Half Array(40h-7Fh)

? Address Lines Allow up to Eight Devices on Bus

? 1 Million Erase/Write Cycles

? ESD Protection > 4,000V

? Data Retention > 200 Years

? Factory Programming (QTP) Available

? Pb-Free and RoHS Compliant

? 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP Packages

? Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C