24FC515屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的24FC515存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24AA515/24LC515/ 24FC515 (24XX515*) is a 64K x 8 (512K bit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.8V to 5.5V). It has been developed for advanced, low power applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to 7FFFh and 8000h to FFFFh. Functional address lines allow up to four devices on the same data bus. This allows for up to 2 Mbits total system EEPROM memory. This device is available in the standard 8-pin plastic DIP and SOIC packages.

Features:

? Low-power CMOS technology:

- Maximum write current 3 mA at 5.5V

- Maximum read current 500 μA at 5.5V

- Standby current 100 nA, typical at 5.5V

? 2-wire serial interface bus, I2C? compatible

? Cascadable for up to four devices

? Self-timed erase/write cycle

? 64-byte Page Write mode available

? 5 ms max. write cycle time

? Hardware write-protect for entire array

? Output slope control to eliminate ground bounce

? Schmitt Trigger inputs for noise suppression

? 100,000 erase/write cycles

? Electrostatic discharge protection > 4000V

? Data retention > 200 years

? 8-pin PDIP, SOIC packages

? Temperature ranges:

- Industrial (I): -40°C to +85°C