描述 Description

The Microchip Technology Inc. 24AA65/24LC65/24C65 (24XX65)* is a “smart” 8K x 8 Serial ElectricallyErasable PROM. This device has been developed foradvanced, low-power applications such as personalcommunications, and provides the systems designerwith flexibility through the use of many new user-programmablefeatures. The 24XX65 offers a relocatable4K bit block of ultra-high-endurance memory for datathat changes frequently. The remainder of the array, or60K bits, is rated at 1,000,000 erase/write (E/W) cyclesensured. The 24XX65 features an input cache for fastwrite loads with a capacity of eight pages, or 64 bytes.This device also features programmable securityoptions for E/W protection of critical data and/or codeof up to fifteen 4K blocks. Functional address linesallow the connection of up to eight 24XX65’s on thesame bus for up to 512K bits contiguous EEPROMmemory. Advanced CMOS technology makes thisdevice ideal for low-power nonvolatile code and dataapplications. The 24XX65 is available in the standard8-pin plastic DIP and 8-pin surface mount SOIJpackage.

特性 Features

Voltage Operating Range: 1.8V to 6.0V- Peak write current 3 mA at 6.0V- Maximum read current 150 μA at 6.0V- Standby current 1 μA, typical
Industry Standard Two-Wire Bus Protocol I2C?Compatible
8-Byte Page, or Byte modes Available
2 ms Typical Write Cycle Time, Byte or Page
64-Byte Input Cache for Fast Write Loads
Up to 8 devices may be connected to the samebus for up to 512K bits total memory
Including 100 kHz (1.8V = Vcc Programmable Block Security Options
Programmable Endurance Options
Schmitt Trigger, Filtered Inputs for NoiseSuppression
Output Slope Control to Eliminate Ground Bounce
Self-Timed Erase and Write Cycles
Power-on/off Data Protection Circuitry
Endurance:- 10,000,000 E/W cycles for a High EnduranceBlock- 1,000,000 E/W cycles for a StandardEndurance Block
Electrostatic Discharge Protection > 4000V
Data Retention > 200 years

簡(jiǎn)介

24C65屬于集成電路（IC）的存儲(chǔ)器。由制造生產(chǎn)的24C65存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。