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1S2076A

Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

Features ?Lowcapacitance.(C=3.0pFmax) ?Shortreverserecoverytime.(trr=8.0nsmax) ?Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

1S2076A

HIGH SPEED SWITCHING DIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: *Case:DO-35GlassCase *Lead:AxialleadsolderableperMIL

SYNSEMI

SynSemi，Inc.

1S2076A

High reliability with glass seal.

Features ?Lowcapacitance.(C=3.0pFmax) ?Shortreverserecoverytime.(trr=8.0nsmax) ?Highreliabilitywithglassseal.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1S2076A

HIGH SPEED SWITCHING DIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1S2076A

SMALL SIGNAL SWITCHING DIODE

REVERSEVOLTAGE:60V CURRENT:0.15A FEATURES Siliconepitaxialplanardiode Highspeedswitchingdiode 500mWpowerdissipation Weight:0.004ounces,0.13grams MECHANICALDATA Case:DO-35,glasscase Polarity:Colorbanddenotescathode

KISEMICONDUCTOR

Kwang Myoung I.S. CO.,LTD

1S2092

SILICON EPTAXIAL PLANAR TYPE

SiliconEptaxialPlanarTypeDiode GENERALPURPOSEDETECTORANDRECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1S2093

SILICON PLANAR TYPE TRIGGER DIODE

SiliconPlanarTypeTriggerDiode THYRISTOR,TRIACTRIGGERAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1S2094

VARIABLE CAPACITANCE DIODE

SiliconEpitaxialPlanarType VARIABLECAPACITANCEDIODE UHF,VHFAFCAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1S2095A

SILICON EPITAXIAL PLANAR TYPE DIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. COREDRIVEAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1S2075

35V Detection switch tube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDF上傳者：深圳冠榮電子有限公司

技術(shù)參數(shù)

  • VRRM(V)：

    35

  • VR(V)：

    30

  • IFSM(A)：

    0.6

  • VF(V)：

    0.8

  • IR (μA)：

    0.1

  • TRR(NS)：

    8.0

  • PACKAGE：

    DO-35

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