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1N60P

Schottky Barrier Diode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60P

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES

FEATURES *Metalsiliconjunction,majoritycarrierconduction. *Highcurrentcapability,lowforwardvoltagedrop. *ExtremelylowreversecurrentIR *Ultraspeedswitchingcharacteristics *Smalltemperaturecoefficientofforwardcharacteristics *SatisfactoryWavedetectionefficiency

DCCOM

Dc Components

1N60P

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60P

Small Signal Schottky Diodes

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1N60P

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

DSK

Diode Semiconductor Korea

1N60P

Small Signal Schottky Diodes

■Features ●VR40V ●IFAV30mA ■Applications ●Useinsuperhighspeedswitchingcircuits,smallcurrentrectifier

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

1N60P

Schottky Barrier Diode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳實(shí)業(yè)有限公司

1N60P

Hermetically Sealed Glass Case Point Contact Germanium Diode

PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

1N60P

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合電子山東星合明輝電子有限公司

1N60P

1.2A, 600V N-CHANNEL?POWER MOSFET; ? RDS(ON) =11.5Ω@VGS = 10V.\n? Ultra Low gate charge (typical 5.0nC)\n? Low reverse transfer capacitance (CRSS = typical 3.0 pF)\n? Fast switching capability\n? Avalanche energy specified\n? Improved dv/dt capability, high ruggedness;

The UTC 1N60P is a high voltage power MOSFET and isdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and a high ruggedavalanche characteristic. This power MOSFET is usually used athigh speed switching applications of power supplies, PWM motorcontrols, high efficient DC to DC converters and bridge circuits.

UTCUnisonic Technologies

友順友順科技股份有限公司

技術(shù)參數(shù)

  • Vdss(V)：

    600

  • Vgss(V)：

    30

  • Id(A)：

    1.2

  • Package：

    TO-92

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更多1N60P供應(yīng)商 更新時(shí)間2025-7-28 10:08:00

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